prochnow experiments in cmos technology pr onl y



DISTORTION3 by PR-y Короткое платье DISTORTION3 by PR-y Короткое платье Новинка

DISTORTION3 by PR-y Короткое платье

6600 руб.
джерси, без аппликаций, круглый вырез горловины, короткие рукава, двухцветный узор, без карманов, платье
Muhammad Hussain Mustafa Advanced Nanoelectronics. Post-Silicon Materials and Devices Muhammad Hussain Mustafa Advanced Nanoelectronics. Post-Silicon Materials and Devices Новинка

Muhammad Hussain Mustafa Advanced Nanoelectronics. Post-Silicon Materials and Devices

15267 руб.
Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to «think outside the box» and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
Professor A. M. Low Popular Scientific Recreations - Science Experiments for Children Professor A. M. Low Popular Scientific Recreations - Science Experiments for Children Новинка

Professor A. M. Low Popular Scientific Recreations - Science Experiments for Children

3575 руб.
Originally published in the late 1800s, this is a book of simple-to-perform scientific experiments, designed to interest children in science. The experiments in the book, ' have been designed to be at once entertaining and illustrative of scientific laws they can be carried out successfully by anyone who follows the instructions carefully'. All the experiments can be performed at home with the minimum of materials. Many of the earliest books, particularly those dating back to the 1900s and before, are now extremely scarce and increasingly expensive. Hesperides Press are republishing these classic works in affordable, high quality, modern editions, using the original text and artwork. Contents Include: Electrical Experiments Experiments with Heat Experiments with Light Experiments with Sound Experiments in Physics Experiments in Chemistry Some Optical Illusions Tricks with Matches and Numerals Miscellaneous Experiments and Tricks
Oliver Brand CMOS - MEMS Oliver Brand CMOS - MEMS Новинка

Oliver Brand CMOS - MEMS

7588.03 руб.
This edition of 'CMOS-MEMS' was originally published in the successful series 'Advanced Micro & Nanosystems'. Here, the combination of the globally established, billion dollar chip mass fabrication technology CMOS with the fascinating and commercially promising new world of MEMS is covered from all angles. The book introduces readers to this fi eld and takes them from fabrication technologies and material charaterization aspects to the actual applications of CMOS-MEMS – a wide range of miniaturized physical, chemical and biological sensors and RF systems. Vital knowledge on circuit and system integration issues concludes this in-depth treatise, illustrating the advantages of combining CMOS and MEMS in the first place, rather than having a hybrid solution.

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Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to «think outside the box» and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.
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